The in-plane dispersion of interface phonon modes in GaSb/InAs semiconductor heterojunctions
- 1 December 1989
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (12), 1167-1170
- https://doi.org/10.1088/0268-1242/4/12/020
Abstract
The authors have used the layer method and a microscopic valence force field model to calculate both bulk, localised and resonant phonon modes for a planar interface. Dispersion curves along the symmetry directions of the two-dimensional Brillouin zone are calculated indicating that the modes are highly localised. They find interface modes both in GaSb/InAs and InAs/GaSb semiconductor heterojunctions but none in the GaAs-AlAs system.Keywords
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