High breakdown voltage GaN HFET with field plate
- 1 January 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (3), 196-197
- https://doi.org/10.1049/el:20010091
Abstract
A novel high breakdown voltage GaN HFET with a field plate (FP GaN HFET) to form a gamma-shape gate is presented. The use of the field plate significantly reduces the field strength under the gate near the drain side. Simulation results show that the peak electric field of the device is reduced from 1.2 × 106 V/cm to 0.9 × 106 V/cm for the particular structure used. A high breakdown voltage (over 110 V) is achieved and the average ratio of BVgd over BVgs reaches a value of 2.4, compared to that of only 1.038 for a conventional GaN HFET.Keywords
This publication has 6 references indexed in Scilit:
- An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHzIEEE Electron Device Letters, 1999
- GaN microwave electronicsIEEE Transactions on Microwave Theory and Techniques, 1998
- High performance AlGaN/GaN HEMT with improved Ohmic contactsElectronics Letters, 1998
- High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substratesElectronics Letters, 1998
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistorsApplied Physics Letters, 1996