High performance AlGaN/GaN HEMT with improved Ohmic contacts
- 1 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (24), 2354-2356
- https://doi.org/10.1049/el:19981618
Abstract
Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Ω.mm, corresponding to a contact resistance of 5.38 × 10–8 Ω.cm2. The fabricated high electron mobility transistors with a 0.25 µm length gate exhibit a cutoff frequency fT of 60 GHz and an fmax of 100 GHz.Keywords
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