A monolithically integrated AlGaAs/GaAs p-i-n/FET Photoreceiver by MOCVD
- 1 October 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (10), 375-376
- https://doi.org/10.1109/edl.1983.25769
Abstract
An AlGaAs/GaAs p-i-n photodiode and a GaAs FET have been monolithically integrated on a GaAs substrate by using the metal-organic chemical vapor deposition (MOCVD) technique and by applying a new interconnection technique. A current amplification characteristic consistent to the device parameters has been demonstrated. This result indicates a suitability of MOCVD to realize the monolithic integration of p-i-n/FET photoreceiver.Keywords
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