Monte Carlo study of hot-electron transport in an InGaAs/InAlAs single heterostructure
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (10), 2353-2360
- https://doi.org/10.1109/16.40921
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion LayerJapanese Journal of Applied Physics, 1987
- Monte Carlo simulation of scattering-induced negative differential resistance in AlGaAs/GaAs quantum wellsJournal of Physics C: Solid State Physics, 1986
- Electron mobility in modulation-doped heterostructuresPhysical Review B, 1984
- On the scattering of electrons by polar optical phonons in quasi-2D quantum wellsJournal of Physics C: Solid State Physics, 1983
- Two-dimensional magnetophonon resonance. II. GaInAs-AlInAs heterojunctionsJournal of Physics C: Solid State Physics, 1983
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature MobilityJournal of the Physics Society Japan, 1982
- The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structuresJournal of Physics C: Solid State Physics, 1982
- Scattering of Electrons by Potential Clusters in Ternary Alloy SemiconductorJapanese Journal of Applied Physics, 1976
- Alloy scattering in ternary III-V compoundsPhysical Review B, 1976
- Application of a Modified Random-Element-Isodisplacement Model to Long-Wavelength Optic Phonons of Mixed CrystalsPhysical Review B, 1968