A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer
- 1 September 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (9R)
- https://doi.org/10.1143/jjap.26.1447
Abstract
Hot electron transport in a MOS inversion layer on a (100) silicon surface was analyzed by using a rigorous Monte Carlo method while taking into account changes in subband structures due to electron repopulation. An iterative procedure of the method consisted of a self-consistent calculation of the Schrödinger and Poisson's equations as well as a Monte Carlo calculation for electron scattering. The calculated relative electron population in each subband significantly differed from the results of a conventional Monte Carlo calculation in a tangential electric field higher than 10 kV/cm, above which carrier heating effects greatly influence the subband structures. The calculated electron drift velocity is in reasonable agreement with the experimental data.Keywords
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