Lattice location and dopant behavior of group II and VI elements implanted in silicon
- 1 April 1970
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 8 (7), 529-531
- https://doi.org/10.1016/0038-1098(70)90297-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Electrical Behavior of Group III and V Implanted Dopants in SiliconJournal of Applied Physics, 1969
- ANNEALING CHARACTERISTICS OF n-TYPE DOPANTS IN ION-IMPLANTED SILICONApplied Physics Letters, 1969
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- Evidence of a replacement reaction between ion implanted substitutional Tl dopants and interstitial Si atomsRadiation Effects, 1969
- Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°CRadiation Effects, 1969