Reproducible growth of low-threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth technique
- 28 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (9), 819-821
- https://doi.org/10.1063/1.101769
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- GaInAsP/InP Single Quantum-Well Lasers by OMVPEJapanese Journal of Applied Physics, 1987
- Resonant injection quantum well diodes and lasersSuperlattices and Microstructures, 1986
- High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxyApplied Physics Letters, 1986
- Threshold current of single quantum well lasers: The role of the confining layersApplied Physics Letters, 1986
- Influence of transmission resonance on carrier collection in a semiconductor quantum wellJournal of Applied Physics, 1986
- Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPEElectronics Letters, 1985
- Heterostructure semiconductor lasers prepared by molecular beam epitaxyIEEE Journal of Quantum Electronics, 1984
- Graded barrier single quantum well lasers - Theory and experimentIEEE Journal of Quantum Electronics, 1983
- 1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1983
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980