Hydrogen-ion bombardment of GaAs
- 15 June 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (12), 981-983
- https://doi.org/10.1063/1.91390
Abstract
Gallium arsenide has been subjected to bombardment by protons, deuterons, and tritons, and the electrical carrier‐removal effects have been investigated. Deuteron bombardment gives vastly more efficient carrier removal than either proton or triton bombardment, and with better thermal stability. A model, based upon nonradiative recombination‐enhanced defect reactions, is presented to explain this effect.Keywords
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