Multiple-energy proton bombardment in n+-GaAs
- 31 March 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (3), 183-189
- https://doi.org/10.1016/0038-1101(77)90182-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Electroabsorption avalanche photodiodesApplied Physics Letters, 1974
- Proton Isolated GaAs Impatt DiodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1974
- High-efficiency proton-isolated GaAs IMPATT diodesElectronics Letters, 1974
- Electrical properties of proton-bombarded Ga1−xAlxAsApplied Physics Letters, 1973
- Optical and electrical properties of proton-bombarded p-type GaAsJournal of Applied Physics, 1973
- Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operationProceedings of the IEEE, 1972
- A semi-insulated gate gallium-arsenide field-effect transistorIEEE Transactions on Electron Devices, 1972
- Isolation of junction devices in GaAs using proton bombardmentSolid-State Electronics, 1969
- GaAs SCHOTTKY BARRIER AVALANCHE PHOTODIODESApplied Physics Letters, 1969
- Die Änderung von Konzentration und Beweglichkeit der Ladungsträger in GaAs bei Bestrahlung mit ProtonenZeitschrift für Naturforschung A, 1966