New efficient phosphor material ZnS:Sm,P for red electroluminescent devices
- 13 January 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (2), 95-96
- https://doi.org/10.1063/1.96946
Abstract
Thin‐film electroluminescent devices employing a new phosphor material ZnS:Sm,P have been found to exhibit bright red emission. Luminous efficiency of ZnS:Sm,P phosphor films is higher than that of ZnS:Sm phosphor films in the range of annealing temperature above 500 °C. A brightness of 1000 cd/m2 and an efficiency of 8×10−2 lm/W have been obtained in the devices with ZnS:Sm(1 at. %),P(0.5 at. %) phosphor films annealed at 600 °C. These results indicate that P is an efficient co‐activator for Sm in ZnS.Keywords
This publication has 1 reference indexed in Scilit:
- Red Electroluminescence and Crystallinity of ZnS:SmF3 Thin FilmsJapanese Journal of Applied Physics, 1984