Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A), L2121-2124
- https://doi.org/10.1143/jjap.27.l2121
Abstract
Zn and Si doping are examined for {110} GaAs epilayers by introducing diethylzinc and silane during the course of metalorganic chemical vapor deposition. Hole concentrations of Zn doped {110} epilayers show a saturation around 1.5·1019 cm-3, which is one sixth of the hole concentration of {100} epilayers, and the occurrence of the saturation is due to interstitially incorporated Zn atoms. Electron concentration of Si-doped {110} epilayers are lower than those of {100} epilayers, which suggests that incorporation of Si atoms into As sites occurs more frequently for {110} epilayers than for {100} epilayers.Keywords
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