Epitaxial CdxHg1−xTe photovoltaic detectors
- 30 June 1976
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 16 (4), 457-464
- https://doi.org/10.1016/0020-0891(76)90087-7
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- High detectivity PbxSn1−xTe photovoltaic diodesInfrared Physics, 1973
- Gigahertz cutoff frequency capabilities of CdHgTe photovoltaic detectors at 10.6 µIEEE Journal of Quantum Electronics, 1972
- Epitaxial (CdHg)Te Infrared Photovoltaic DetectorsApplied Physics Letters, 1971
- Lead-tin telluride phetovoltaic detectors for the 8–14μm atmospheric windowInfrared Physics, 1970
- Photodetectors for optical communication systemsProceedings of the IEEE, 1970
- Inversion of Conduction and Valence Bands inAlloysPhysical Review B, 1967
- CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORSApplied Physics Letters, 1967
- PHOTOVOLTAIC EFFECT IN PbxSn1−xTe DIODESApplied Physics Letters, 1966
- Band Structure and Laser Action inPhysical Review Letters, 1966
- Photon Effects in Hg_1−x Cdx TeApplied Optics, 1965