Single-longitudinal-mode GaAs/GaAlAs channeled-substrate lasers grown by molecular beam epitaxy
- 1 May 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (9), 834-836
- https://doi.org/10.1063/1.94941
Abstract
We present here the first simple double-heterostructure channeled-substrate laser with lateral index guiding grown by molecular beam epitaxy. The channel is along [110] direction. The threshold current is 60 mA. Linear light-current relation and stable far-field patterns have been observed over the range of currents tested (from 60 to 160 mA). The lasers operate in single longitudinal mode over a wide range of current. The intensity ratio of the dominant mode and the neighboring mode is greater than 100:1.Keywords
This publication has 8 references indexed in Scilit:
- Reduction of threshold current in GaAlAs terraced substrate lasersIEEE Journal of Quantum Electronics, 1981
- Channelled-substrate narrow-stripe GaAs/GaAlAs injection lasers with extremely low threshold currentsElectronics Letters, 1979
- Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structureIEEE Journal of Quantum Electronics, 1978
- Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1977
- Channeled substrate buried heterostructure GaAs- (GaAl)As injection lasersJournal of Applied Physics, 1976
- Etched buried heterostructure GaAs/GaAlAs injection lasersApplied Physics Letters, 1975
- Transverse-junction-stripe lasers with a GaAs p-n homojunctionIEEE Journal of Quantum Electronics, 1975
- GaAs–Ga1−xAlxAs buried-heterostructure injection lasersJournal of Applied Physics, 1974