Stability and interdiffusion at MOCVD grown ZnSe/GaAs interfaces
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4), 467-470
- https://doi.org/10.1016/0022-0248(90)90760-i
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVDJapanese Journal of Applied Physics, 1986
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985