Mechanism for diamond growth from methyl radicals

Abstract

We use a 9‐carbon model compound to describe a proposed mechanism for homoepitaxial growth of diamond from methyl radicals on a hydrogenated, electrically neutral (100) surface. We estimate enthalpy and entropy changes for each step in the mechanism using group additivity methods, taking into account the types of bonding and steric repulsions found on the (100) surface. Rate constants are estimated based on analogous reactions for hydrocarbon molecules, while gas phase species concentrations are taken from our previous measurements. The rate equations are then integrated. The method, which contains no adjustable parameters or phenomenological constants, predicts a growth rate of between 0.06 and 0.6 μm/h, depending on the local details of the surface. Uncertainties related to the use of a model compound rather than diamond are discussed. The analysis demonstrates that the proposed mechanism is feasible.