MOS threshold shifting by ion implantation
- 30 November 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (11), 1217-1232
- https://doi.org/10.1016/0038-1101(73)90077-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Threshold shift calculations for ion implanted MOS devicesSolid-State Electronics, 1972
- Characteristics of p-channel MOS field effect transistors with ion-implanted channelsSolid-State Electronics, 1972
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972
- A complementary MOS 1.2 volt watch circuit using ion implantationSolid-State Electronics, 1972
- THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATIONApplied Physics Letters, 1971
- The influence of non-uniformly doped substrates on mos C-V curvesSolid-State Electronics, 1970
- Silicon gate technologySolid-State Electronics, 1970
- Barrier energies in MOS structuresIEEE Transactions on Electron Devices, 1966