Silicon gate technology
- 31 August 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (8), 1125-1144
- https://doi.org/10.1016/0038-1101(70)90124-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gatesSolid-State Electronics, 1968
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- The use of MOS structure for the design of high value resistors in monolithic integrated circuitsIEEE Transactions on Electron Devices, 1966
- The origin of channel currents associated with P+regions in siliconIEEE Transactions on Electron Devices, 1965
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Gettering of Metallic Impurities from Planar Silicon DiodesJournal of the Electrochemical Society, 1963
- Controlled Etching of Silicon in the HF-HNO[sub 3] SystemJournal of the Electrochemical Society, 1962