Physical properties and photoinduced changes of amorphous GeS films
- 1 July 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 117 (4), 251-260
- https://doi.org/10.1016/0040-6090(84)90355-9
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Raman study of evaporated and sputtered GexSe1−x glass filmsApplied Physics Letters, 1981
- Photodoping Sensitivity of Ag into Amorphous Ge30S70FilmsJapanese Journal of Applied Physics, 1980
- Effects of hydrostatic pressure on the successive phase transitions in ferroelectric {N(Ch3)4}2 CoCl4 and {N(CH3)4}2ZnCl4Solid State Communications, 1979
- Photo-induced absorption change in some Se-based glass alloy systemsPhysical Review B, 1979
- Thermally induced effects in evaporated chalcogenide films. I. StructurePhysical Review B, 1978
- Photo-induced ESR and optical absorption edge shift in amorphous Ge-S filmsSolid State Communications, 1978
- Reversible photostructural change in melt-quenched As2S3 glassSolid State Communications, 1977
- Optical-Absorption Edge and Raman Scattering inGlassesPhysical Review B, 1973
- Laser-Induced Refractive-Index Change in As–S–Ge GlassesApplied Physics Letters, 1972
- Properties and Structure of Glasses in the System Ge-SJournal of the American Ceramic Society, 1971