Role of cation dissociation in Schottky barrier formation at II–VI compound semiconductor-metal interfaces
- 1 July 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 93 (1-2), 67-74
- https://doi.org/10.1016/0040-6090(82)90091-8
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Atomic and electronic structure of InP–metal interfaces: A prototypical III–V compound semiconductorJournal of Vacuum Science and Technology, 1981
- Chemical basis for InP-metal Schottky-barrier formationApplied Physics Letters, 1981
- Abruptness of Semiconductor-Metal InterfacesPhysical Review Letters, 1981
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Surface reactions and interdiffusionJournal of Vacuum Science and Technology, 1979
- Chemical effects in Schottky barrier formationJournal of Physics C: Solid State Physics, 1978
- Transition in Schottky Barrier Formation with Chemical ReactivityPhysical Review Letters, 1978
- Electron energy loss spectroscopy of the Si(111)—simple-metal interfacePhysical Review B, 1977
- Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bendingPhysical Review B, 1976
- Chemical Bonding and Structure of Metal-Semiconductor InterfacesPhysical Review Letters, 1975