A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- 63-75 GHz fT SiGe-base heterojunction bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Graded-SiGe-base, poly-emitter heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- An analytical and experimental investigation of the cutoff frequency f/sub T/ of high-speed bipolar transistorsIEEE Transactions on Electron Devices, 1988
- Comparison of experimental and theoretical results on polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1984
- Effect of emitter contact on current gain of silicon bipolar devicesIEEE Transactions on Electron Devices, 1980
- The SIS tunnel emitter: A theory for emitters with thin interface layersIEEE Transactions on Electron Devices, 1979