Kinetics of interstitial supersaturation during oxidation of silicon
- 1 September 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (5), 449-451
- https://doi.org/10.1063/1.94384
Abstract
The kinetics of the supersaturation of self-interstitials during the thermal oxidation of silicon is reexamined by considering a finite diffusivity of these interstitials. The rate of interstitial generation is assumed to be proportional to the rate of oxidation, and the rate of surface annihilation is assumed to be a first order reaction. The result from an analytical solution shows that within a reasonable oxidation time span, a suitable power-law kinetics is obtained, with an exponent that falls within the range of most of the reported experimental values.Keywords
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