X-Ray Investigation of the Perfection of Silicon

Abstract

The integrated reflections of silicon crystals with dislocation densities from 10² to 7×10⁴ cm⁻² have been measured on a double crystal x‐ray spectrometer using AgKα₁ radiation and the (333) reflection. The relevancy of dislocation distribution, residual (growing) deformation strains, and solute strains to the accuracy of the correlation between the rocking curve parameters and dislocation density is discussed. Lastly, the relative contribution of the 3λ component of radiation from the continuous spectrum to the integrated intensity was found to be a sensitive function of dislocation density in these low dislocation crystals, thus providing the most reliable means for evaluating crystalline perfection by this technique.