Characterization and control of II–VI/III–V heterovalent interfaces
- 2 February 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 184-185, 163-172
- https://doi.org/10.1016/s0022-0248(98)80315-1
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Surface structure of Zn- or Se-treated GaAs(001) and its influence for ZnSe heteroepitaxyApplied Surface Science, 1997
- Structural Change of As-Stabilized GaAs(001)-( 2×4) and -c( 4×4) Induced by Zinc ExposureJapanese Journal of Applied Physics, 1997
- ZnSe epitaxial growth on zinc- and selenium-treated GaAs(001) surfaces observed by STMApplied Surface Science, 1996
- Measurement of Interface-Induced Optical Anisotropies of a Semiconductor Heterostructure: ZnSeGaAs(100)Physical Review Letters, 1996
- In situ characterization of ZnSe/GaAs(100) interfaces by reflectance difference spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Structures of As-Rich GaAs(001)-(2 × 4) ReconstructionsPhysical Review Letters, 1994
- Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuumPhysical Review B, 1992
- Strain and dipole effects in covalent-polar semiconductor superlatticesPhysical Review B, 1991
- Polar-on-nonpolar epitaxyJournal of Crystal Growth, 1987
- Polar heterojunction interfacesPhysical Review B, 1978