Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source
- 1 October 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 155 (3-4), 157-163
- https://doi.org/10.1016/0022-0248(95)00216-2
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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