Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Abstract

Zinc blende and wurtzitic GaN films have been epitaxially grown onto (001)Si by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy, using a two‐step growth process. In this process a thin buffer layer is grown at relatively low temperatures followed by a higher temperature growth of the rest of the film. GaN films grown on a single crystalline GaN buffer have the zinc blende structure, while those grown on a polycrystalline or amorphous buffer have the wurtzitic structure.