Kinetic modeling of film growth rates of TiN films in atomic layer deposition
- 1 May 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (9), 4632-4634
- https://doi.org/10.1063/1.373116
Abstract
A kinetic model has been studied for exploring the prospects of atomic layer deposition (ALD) of TiN thin films. In the present article, assuming the existence for readsorption of each reactant, we can explain and model the film growth of 0–2 at. ML in one deposition cycle in TiN-ALD. Applying the proposed model to TiN films grown by ALD using tetrakis(dimethylamido)titanium and ammonia, the parameters related to both the adsorption rate and the adsorption order of each reactant were extracted. With the extracted parameters, TiN film thickness in one deposition cycle depending on the pulse time of each reactant could be predicted in a reasonable range of accuracy.Keywords
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