Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases
- 1 December 1994
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 82-83, 354-358
- https://doi.org/10.1016/0169-4332(94)90241-0
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 7 references indexed in Scilit:
- Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gasApplied Physics Letters, 1993
- RHEED investigation of Ge surface segregation during gas source MBE of
Si Si Surface Science, 1993 - Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor depositionJournal of Crystal Growth, 1991
- Germanium Atomic Layer Epitaxy Controlled by Surface Chemical ReactionsJournal of the Electrochemical Society, 1989
- Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfacesPhysical Review B, 1988
- Hydrogen adsorption on Ge(100) studied by high-resolution energy-loss spectroscopyPhysical Review B, 1986
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985