Reduction of charge-center scattering rate inSe
- 15 March 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (8), 3900-3909
- https://doi.org/10.1103/physrevb.35.3900
Abstract
The electrical resistivity, electron concentration, and mobility of Se are reported for 4.2<T<300 K and for 0.0001<x<0.12. The data are interpreted within an electronic band-structure model that assumes the existence of resonant donors (due to the presence of Fe ions) whose ground-state energy coincides with the conduction-band continuum. The electron-concentration data enable determination of the donor energy as a function of the temperature and crystal composition. Unexpectedly high values of the low-temperature electron mobility for ∼0.0003≤x≤0.01 indicate a reduction of the charged-impurity scattering rate at these temperatures. This effect is interpreted in terms of a spatial ordering of charges within the Fe-related impurity system.
Keywords
This publication has 18 references indexed in Scilit:
- Formation of a superlattice of ionized resonant donors or acceptors in semiconductorsSolid State Communications, 1986
- Location of the Fe2+(3d6) donor in the band structure of mixed crystals Hg1-vCdvSeJournal of Physics C: Solid State Physics, 1986
- Diluted magnetic semiconductors: Issues and opportunitiesJournal of Vacuum Science & Technology A, 1986
- Bonding and stability in narrow-gap ternary semiconductors for infrared applicationsJournal of Vacuum Science & Technology A, 1986
- Angular dependence of the quantum oscillations in the diluted magnetic semiconductor SePhysical Review B, 1986
- Spin-dependent scattering of conduction electrons in diluted magnetic semiconductors: SePhysical Review B, 1985
- Effect of Fe on the carrier instability in HgSeApplied Physics Letters, 1985
- Band structure and impurity states in diluted magnetic semiconductorsProgress in Crystal Growth and Characterization, 1984
- Diluted magnetic semiconductors: An interface of semiconductor physics and magnetism (invited)Journal of Applied Physics, 1982
- Band Structure of HgSe: Band Parameter Determinations from Effective-Mass Data, and Concentration Dependence and Anisotropy of Beating Effects in the Shubnikov-de Haas OscillationsPhysical Review B, 1971