Monolithic two-dimensional surface-emitting strained-layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode laser arrays with over 50% differential quantum efficiencies
- 5 August 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6), 632-634
- https://doi.org/10.1063/1.105407
Abstract
No abstract availableKeywords
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