Spatial localization of Si in selectively δ-doped AlxGa1−xAs/GaAs heterostructures for high mobility and density realization
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 253-256
- https://doi.org/10.1016/0022-0248(89)90395-3
Abstract
No abstract availableKeywords
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