Spatial localization of impurities in δ-doped GaAs
- 2 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (18), 1508-1510
- https://doi.org/10.1063/1.99114
Abstract
Capacitance‐voltage profiles on δ‐doped GaAs grown by molecular beam epitaxy reveal extremely narrow widths of ≲40 Å at room temperature. Subband structure and capacitance‐voltage (C‐V) profiles of δ‐doped GaAs are calculated self‐consistently. Experimental C‐V profiles agree with self‐consistent results, only if we assume that Si impurities are localized on the length scale of the lattice constant in the host GaAs zinc‐blende lattice.Keywords
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