Some properties of photovoltaic CdxHg1−xTe detectors for infrared radiation
- 30 November 1975
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 15 (4), 331-337
- https://doi.org/10.1016/0020-0891(75)90051-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Carrier lifetime in n-Hg0.8Cd0.2Te at 77 KPhysica Status Solidi (a), 1974
- Gigahertz cutoff frequency capabilities of CdHgTe photovoltaic detectors at 10.6 µIEEE Journal of Quantum Electronics, 1972
- Epitaxial (CdHg)Te Infrared Photovoltaic DetectorsApplied Physics Letters, 1971
- Photodetectors for optical communication systemsProceedings of the IEEE, 1970
- Energy Gap in Hg1−xCdxTe by Optical AbsorptionJournal of Applied Physics, 1969
- CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORSApplied Physics Letters, 1967