Phonon-sideband MO-CVD quantum-well AlxGa1−xAs-GaAs heterostructure laser
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8), 502-505
- https://doi.org/10.1063/1.90843
Abstract
Laser operation (4.2–300 °K) of multiple‐quantum‐well AlxGa1−xAs‐GaAs heterostructures on a phonon (LO) sideband ∼36 meV below the lowest confined‐particle transitions is described. Phonon‐sideband laser data are presented on two different metalorganic chemical‐vapor‐deposited (MO‐CVD) quantum‐well heterostructures with four GaAs active regions (Lz∼50 and ∼90 Å) coupled by three AlxGa1−xAs (x∼0.35) barriers.Keywords
This publication has 11 references indexed in Scilit:
- Low-threshold continuous laser operation (300–337 °K) of multilayer MO-CVD AlxGa1−xAs-GaAs quantum-well heterostructuresApplied Physics Letters, 1978
- Photopumped laser operation of MO-CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K)Applied Physics Letters, 1978
- Carrier collection in a semiconductor quantum wellSolid State Communications, 1978
- Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasersApplied Physics Letters, 1978
- Electron-hole plasma in direct-gap semiconductors with low polar coupling: GaAs, InP, and GaSbPhysical Review B, 1978
- Luminescence Due to High-Density Electron-Hole Plasma in GaAsJournal of the Physics Society Japan, 1977
- Coulomb Interaction in Semiconductor LasersPhysical Review B, 1972
- Near-Bandgap, Narrow-Spectrum, Low-Loss, Volume-Excited GaAs Laser (77°K) with Time-Uniform OutputJournal of Applied Physics, 1970
- Spontaneous and Stimulated Carrier Lifetime (77°K) in a High-Purity, Surface-Free GaAs Epitaxial LayerJournal of Applied Physics, 1970
- Threshold Requirements and Carrier Interaction Effects in GaAs Platelet Lasers (77°K)Journal of Applied Physics, 1970