Rapid Isothermal Processing (RIP)
- 1 January 1995
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 250 references indexed in Scilit:
- Mechanistic studies of photoinduced reactions at semiconductor surfacesProgress in Surface Science, 1992
- Ohmic contacts to InP-based materials induced by means of rapid thermal low pressure (metallorganic) chemical vapor deposition techniqueJournal of Electronic Materials, 1991
- Evidence for a new passivating indium rich phosphate prepared by ultraviolet/ozone oxidation of InPApplied Physics Letters, 1991
- Hydrogen-plasma and photo-effects on MOMBE of GaAsJournal of Crystal Growth, 1991
- Si and Ge gas-source molecular beam epitaxy (GSMBE)Journal of Crystal Growth, 1991
- Photochemical vapor deposition of iron-cobalt thin films: wavelength and temperature control of film compositionsChemistry of Materials, 1991
- Characterization of Rapidly Thermally Annealed GaAs and InP Surfaces Using Schottky BarriersPhysica Status Solidi (a), 1990
- Improvement of InP MISFET characteristics using infra-red lamp annealingElectronics Letters, 1985
- Contact resistivity of IR lamp alloyed Au-Ge metallisation on GaAsElectronics Letters, 1984
- Annealing of Si3N4-capped ion-implanted InPElectronics Letters, 1981