Hydrogen-plasma and photo-effects on MOMBE of GaAs
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4), 1041-1042
- https://doi.org/10.1016/0022-0248(91)90601-z
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- New low-temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasmaApplied Physics Letters, 1988
- Low-temperature GaAs epitaxial growth using electron-cyclotron resonance/metalorganic-molecular-beam epitaxyJournal of Applied Physics, 1988
- On the Reaction Mechanism of the Pyrolyses of TMG and TEG in MOCVD Growth ReactorsJapanese Journal of Applied Physics, 1987