Growth of Low Dislocation Density GaSb Single Crystals by Czochralski Method
- 1 June 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (6R), 956-957
- https://doi.org/10.1143/jjap.21.956
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Observation of Growth Striations in Undoped GaSb Single CrystalsJournal of the Electrochemical Society, 1981
- A novel encapsulant material for LEC growth of GaSbJournal of Crystal Growth, 1980
- LEC Growth of GaSb Single Crystals Using Boric OxideJapanese Journal of Applied Physics, 1980
- Growth of Dislocation-Free Undoped InP CrystalsJapanese Journal of Applied Physics, 1980