A 3.5 watt high efficiency GaAs FET amplifier for digital telephone communications
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1183-1184 vol.3
- https://doi.org/10.1109/mwsym.1992.188208
Abstract
A high-efficiency 3.5-W power module intended for commercial application in the digital cellular telephone market is described. The demonstration circuit is designed to be coupled with a functional gain control circuit or can be a stand-alone power stage. The GaAs FET module operates at 6.2 V, and produces 35.5 dBm of output power, 12.5 dB of gain, and 53% power added efficiency in the 890-920-MHz frequency range.<>Keywords
This publication has 2 references indexed in Scilit:
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- Harmonic Reaction Amplifier - A Novel High-Efficiency and High-Power Microwave AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987