Retention analysis of the memorized states of the MFIS structure for ferroelectric-gate FET memory by considering leakage current through ferroelectric and insulator layers
- 1 February 2001
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 34 (1-4), 37-46
- https://doi.org/10.1080/10584580108012872
Abstract
No abstract availableKeywords
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