Selective positioning of InAs self-organized quantum dots on sub-250 nm GaAs facets
- 1 December 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (22), 3254-3256
- https://doi.org/10.1063/1.120306
Abstract
We have selectively grown GaAs mesas with (100) top facets that range from several μm to less than 250 nm in width on an oxide-patterned GaAs substrate, and InAs self-organized quantum dots (SOQDs) on top of the facets. For a given amount of InAs deposited, the dot density varies with the facet width, and is higher than the density on a planar, nonpatterned substrate. The SOQDs also tend to form at the facet edges. These observations are indicative of a strong surface diffusion effect of In-containing species adsorbed on the various crystalline facets of the GaAs mesas.Keywords
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