Minority carrier injection into heavily doped silicon
- 1 February 1977
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (2), 167-170
- https://doi.org/10.1016/0038-1101(77)90069-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Die rekombination in thyristoren und gleichrichtern aus silizium: Ihr einfluss auf die durchlasskennlinie und das freiwerdezeitverhaltenSolid-State Electronics, 1975
- Calculation of the emitter efficiency of bipolar transistorsIEEE Transactions on Electron Devices, 1973
- Auger-rekombination in SiSolid State Communications, 1973
- Transport equations in heavy doped siliconIEEE Transactions on Electron Devices, 1973