Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate

Abstract

Structural and electronic stabilities in hydrogenated amorphous silicon (a-Si:H) prepared at deposition rates ranging 10–50 Å/sec have systematically been investigated by observing annealing effects on the spectra of optical absorption, photoluminescence and infrared absorption. High-rate samples deposited at a substrate temperature of 200°C exhibited excellent thermal stability in electronic properties at annealing temperatures up to 465°C.