Conductivity changes in dehydrogenated and rehydrogenated discharge-produced a-Si:H
- 1 October 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (7), 609-612
- https://doi.org/10.1063/1.92036
Abstract
The dark and photoconductivity of a‐Si:H was measured after in‐ and out‐diffusion of hydrogen. The results agreed with the expected variations in the density of uncompensated dangling bonds. Secondary‐ion mass spectrometry profiles confirmed the changes in hydrogen concentration. Samples doped with phosphorus behaved differently from undoped samples. Annealing above 400 °C quenched the optically induced conductivity changes found in a‐Si:H.Keywords
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