A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (10), 394-395
- https://doi.org/10.1109/55.320979
Abstract
In this paper, a simple edge termination is described which can achieve near ideal parallel plane breakdown for silicon carbide devices. This novel edge termination involves self aligned implantation of a neutral species on the edges of devices to form an amorphous layer. With this termination formed using argon implantation, the breakdown voltage of Schottky barrier diodes was measured to be very close to ideal plane parallel breakdown voltage.Keywords
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