Ion beam hydrogenation of amorphous silicon

Abstract

A Kaufman ion beam source was used to implant hydrogen atoms into glow‐discharge‐deposited amorphous silicon materials in which the hydrogen content had been driven out by heating. We found that the hydrogen atoms introduced by this low‐energy (less than 700 eV) ion implantation method bonded predominantly as SiH. An air mass one, photo‐to‐dark‐conductivity ratio as high as 5.6×10⁵ has been obtained with hydrogen‐implanted materials. No light‐induced reduction of the photo‐ and dark conductivities has been observed in these materials after 20 h of AMl illumnination.