Synchrotron radiation investigation of H: GaAs(110)
- 3 October 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 162 (1-3), 39-45
- https://doi.org/10.1016/0039-6028(85)90873-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Interaction of hydrogen with GaAs (0 0 1)-2×4Solid State Communications, 1985
- Reflection electron-energy-loss investigation of the H-GaAs(110) surfacePhysical Review B, 1984
- Oxygen and hydrogen adsorption on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Theoretical investigation of hydrogen chemisorption on Ga-containing III–V compoundsJournal of Vacuum Science and Technology, 1982
- Observation of Ge-induced electronic states at the Ge:GaAs(110) interface by means of polarization-dependent UPSJournal of Vacuum Science and Technology, 1982
- Angle-resolved photoemission from GaAs (110) surface statesPhysics Letters A, 1978