A theoretical treatment of GaAs growth by vapour phase transport for {001} orientation
- 1 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 142-146
- https://doi.org/10.1016/0022-0248(75)90123-2
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- GaAs growth by vapour phase transport: II. Interpretation of the growth of the {001} faces by the adsorption of gallium monochloride and arsenic moleculesJournal of Crystal Growth, 1975
- GaAs growth by vapour phase transport: I. Study of the effect of supersaturation and surface adsorptionJournal of Crystal Growth, 1975
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- Epitaxial GaAs Kinetic Studies: {001} OrientationJournal of the Electrochemical Society, 1970
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- The Transport of Gallium Arsenide in the Vapor Phase by Chemical ReactionJournal of the Electrochemical Society, 1964
- Structure, growth and morphology of crystals*Zeitschrift für Kristallographie, 1963
- Étude thermodynamique des composés III-V et II-VI par spectrométrie de masseJournal de Chimie Physique et de Physico-Chimie Biologique, 1958
- The crystal structure of gallium dichlorideJournal of Inorganic and Nuclear Chemistry, 1957