Hole drift velocity in the warped band model of GaAs
- 1 January 1995
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 10 (1), 11-17
- https://doi.org/10.1088/0268-1242/10/1/002
Abstract
Hole transport in the warped band model of GaAs has been investigated using the ensemble Monte Carlo approach. Scattering rates used in the simulations were derived for warped heavy and light hole bands and for a spherical split-off band. Warping was taken into account exactly in the determination of carrier states after scattering. The calculated velocity-field characteristics are in better agreement with experimental data than models that account for valence band warping by the use of approximate overlap functions. The valence band parameter set (A=-7.65, B=-4.82, C=7.70) gave the closest fit to the experiment and to results of a realistic band-structure model.Keywords
This publication has 10 references indexed in Scilit:
- Warm and hot hole drift velocity in GaAs studied by Monte Carlo simulationJournal of Applied Physics, 1992
- k-space carrier dynamics in GaAsApplied Physics Letters, 1992
- Scattering rates for holes near the valence-band edge in semiconductorsJournal of Applied Physics, 1990
- Monte Carlo investigation of the electron-hole-interaction effects on the ultrafast relaxation of hot photoexcited carriers in GaAsPhysical Review B, 1987
- Monte Carlo investigation of transient hole transport in GaAsJournal of Applied Physics, 1984
- Theory of high-field transport of holes in GaAs and InPPhysical Review B, 1984
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- Hole Transport in Polar SemiconductorsPhysica Status Solidi (b), 1972
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Polar Mobility of Holes in III-V CompoundsPhysical Review B, 1971