Chemical beam epitaxy of indium phosphide
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4), 135-142
- https://doi.org/10.1016/0022-0248(90)90351-k
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Carbon reduction in GaAs films grown by laser-assisted metalorganic molecular beam epitaxyApplied Physics Letters, 1989
- Surface chemical kinetics during the growth of GaAs by chemical beam epitaxyJournal of Crystal Growth, 1989
- Gas source MBE growth of InPJournal of Crystal Growth, 1989
- Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Sn doping for InP and InGaAs grown by metalorganic molecular beam epitaxy using tetraethyltinJournal of Crystal Growth, 1989
- Summary Abstract: Improved material properties of GaAs grown on novel substrate orientationsJournal of Vacuum Science & Technology B, 1988
- Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxyApplied Physics Letters, 1987
- Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Electrical and optical properties of Be-doped InP grown by molecular beam epitaxyJournal of Applied Physics, 1983