Confinement and parallel-conduction effective mass in an ultrathin strained quantum-well system
- 15 September 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (11), 5889-5892
- https://doi.org/10.1103/physrevb.44.5889
Abstract
The variations of the energy levels in a conduction quantum well of InP/InAs/InP versus its width are calculated using two different approaches: a self-consistent tight-binding calculation and an effective-mass description. The introduction of nonparabolicity appears to have a noticeable effect. The importance of taking into account the nonparabolicity becomes essential in the estimation of the equivalent parallel effective mass, which characterizes the parallel transport in such systems.Keywords
This publication has 10 references indexed in Scilit:
- InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxyApplied Physics Letters, 1990
- Band nonparabolicities in lattice-mismatch-strained bulk semiconductor layersPhysical Review B, 1990
- Connection of envelope functions at semiconductor heterointerfaces. II. Mixings of Γ and X valleys in GaAs/AsPhysical Review B, 1989
- Connection of envelope functions at semiconductor heterointerfaces. I. Interface matrix calculated in simplest modelsPhysical Review B, 1989
- Band-edge deformation potentials in a tight-binding frameworkPhysical Review B, 1988
- Band nonparabolicity effects in semiconductor quantum wellsPhysical Review B, 1987
- Effect of conduction-band nonparabolicity on quantized energy levels of a quantum wellApplied Physics Letters, 1986
- Validity of the effective-mass approximation for shallow impurity states in narrow superlatticesPhysical Review B, 1983
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Energy-Momentum Relationship in InAsPhysical Review Letters, 1968